Infineon IPA65R190CFD: A 650V CoolMOS™ CFD2 Power Transistor for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching devices. Addressing this challenge, Infineon Technologies introduces the IPA65R190CFD, a 650V CoolMOS™ CFD2 power transistor engineered to set a new benchmark in performance for demanding switching applications.

At the heart of this device is Infineon’s revolutionary CoolMOS™ CFD2 technology, which successfully merges the best attributes of a fast-switching superjunction MOSFET with the robust characteristics of a charge-storage diode. This unique combination is pivotal for applications requiring both high switching frequency and high reliability. The IPA65R190CFD boasts an exceptionally low typical on-state resistance (RDS(on)) of 190 mΩ, which directly translates to reduced conduction losses. This allows designers to achieve higher system efficiency and manage thermal performance more effectively, often enabling the use of smaller heat sinks and reducing the overall system size and cost.

A key innovation of the CFD2 series is the integrated fast body diode. Traditional MOSFETs suffer from poor reverse recovery performance, leading to significant switching losses and electromagnetic interference (EMI) in circuits like power factor correction (PFC) and bridge topologies. The IPA65R190CFD effectively eliminates this bottleneck. Its co-optimized body diode exhibits superior reverse recovery characteristics (Qrr and trr), drastically reducing switching losses and enabling operation at higher frequencies. This makes it an ideal candidate for hard- and soft-switching topologies found in server and telecom SMPS, industrial motor drives, solar inverters, and lighting systems.

Furthermore, the device offers enhanced ease of use. Its high dv/dt robustness and low gate charge (Qg) simplify gate driving design and improve noise immunity, contributing to more stable and reliable system operation. The 650V voltage rating provides a comfortable safety margin for operation off universal mains inputs (85 VAC – 305 VAC), ensuring resilience against voltage spikes and transients.

ICGOOODFIND: The Infineon IPA65R190CFD represents a significant leap in high-voltage power switch technology. By masterfully combining ultra-low conduction losses with an exceptionally efficient body diode, it delivers top-tier efficiency, enables higher power density, and improves system reliability, making it a superior choice for the next generation of high-efficiency power supplies and inverters.

Keywords: CoolMOS™ CFD2, High-Efficiency Switching, Low RDS(on), Fast Body Diode, 650V Rating.