Infineon IKW30N65ES5XKSA1 650V 30A TRENCHSTOP™ 5 IGBT: Datasheet and Application Overview
The Infineon IKW30N65ES5XKSA1 is a state-of-the-art 650V, 30A IGBT belonging to the advanced TRENCHSTOP™ 5 technology family. This device is engineered to deliver an optimal balance of low saturation voltage and minimal switching losses, making it a premier choice for high-efficiency power conversion systems. Its robust design is tailored for demanding applications, including industrial motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.
A key highlight of this IGBT is its trench gate field-stop structure. This sophisticated technology significantly enhances conductivity while simultaneously reducing turn-off losses. The result is a device that operates with high efficiency even at elevated switching frequencies, a critical requirement for modern compact and energy-dense power supplies. The low VCE(sat) ensures reduced conduction losses, directly translating into cooler operation and higher overall system reliability.
The IKW30N65ES5XKSA1 is offered in the TO-247 package, which provides superior thermal performance. This package is renowned for its ability to effectively transfer heat from the silicon die to the heatsink, allowing the device to handle high power dissipation. Designers can leverage this to either maximize the output current in a given form factor or reduce the size and cost of the required thermal management system.
From an application perspective, this IGBT is particularly suited for circuits operating in the 20-30 kHz range. Its positive temperature coefficient simplifies the paralleling of multiple devices, which is essential for scaling up current handling in high-power modules. Furthermore, it features a tight parameter distribution and robust short-circuit capability (SCSOA), ensuring consistent performance and enhanced system durability under fault conditions. The integrated anti-parallel emitter-controlled diode offers excellent soft reverse recovery characteristics, which is vital for minimizing voltage overshoots and electromagnetic interference (EMI) in inverter bridges.
ICGOOODFIND: The Infineon IKW30N65ES5XKSA1 IGBT stands out as a high-performance semiconductor solution that masterfully combines efficiency, robustness, and thermal superiority. It is an ideal component for engineers designing next-generation power electronics that demand reliability, compactness, and high energy efficiency.
Keywords: TRENCHSTOP™ 5, 650V IGBT, Low VCE(sat), High Efficiency, TO-247 Package
