Infineon BSC019N02KSG: Key Specifications and Application Circuit Design Guide
The Infineon BSC019N02KSG is a state-of-the-art N-channel MOSFET utilizing OptiMOS™ 5 technology, designed to deliver exceptional efficiency and robustness in a compact package. It stands out in the crowded power semiconductor market by offering an optimal balance of low on-state resistance and high switching performance, making it an ideal choice for a wide range of power management applications.
Key Specifications
The cornerstone of this device's performance is its remarkably low on-state resistance (RDS(on)) of just 1.9 mΩ (max. at VGS = 10 V). This ultra-low resistance is the primary factor in minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. The MOSFET is rated for a drain-source voltage (VDS) of 20 V, making it perfectly suited for low-voltage, high-current scenarios. Its continuous drain current (ID) is an impressive 50 A at a case temperature (TC) of 25°C, showcasing its ability to handle significant power.
The device features a low gate charge (Qg) and low figures of merit (e.g., RDS(on) × Qg), which are critical for achieving high-frequency switching with minimal driving losses. This allows for the design of smaller, more efficient power converters. Housed in a PG-TDSON-8 (3.3x3.3) package, it offers an excellent thermal footprint and power density, which is crucial for space-constrained modern electronics.
Application Circuit Design Guide
The BSC019N02KSG is predominantly used in synchronous rectification stages of switch-mode power supplies (SMPS) and in DC-DC converter topologies, such as buck and boost converters. Its high-current capability also makes it an excellent choice for motor control circuits and power management in computing and server applications.
1. Synchronous Buck Converter Design:
In a typical 12V to 1.2V @ 20A synchronous buck converter, the BSC019N02KSG is ideal for the low-side (synchronous) switch position. Its ultra-low RDS(on) is critical here, as the low-side MOSFET conducts for a significant portion of the switching cycle. Minimizing its voltage drop is essential for maximizing overall efficiency. A high-side MOSFET with a similarly low gate charge should be selected to complement it.
2. Gate Driving Considerations:
While the device can be driven with a standard 4.5V to 10V gate signal, a gate driver IC is highly recommended to ensure sharp switching transitions. This minimizes the time spent in the linear region, further reducing switching losses. A small series gate resistor (e.g., 2.2Ω to 4.7Ω) is often used to dampen ringing and control EMI, but its value must be optimized to avoid increasing switching times excessively.
3. Layout and Thermal Management:
Proper PCB layout is paramount for realizing the full performance of this MOSFET. The critical high-current loop (from input capacitor, through the high-side and low-side MOSFETs, to the inductor) must be as short and wide as possible to minimize parasitic inductance and resistance. The exposed thermal pad must be soldered to a large copper pour on the PCB, which acts as the primary heat sink. Multiple vias under the package are essential to transfer heat to inner and bottom layers, ensuring the junction temperature remains within safe limits.
ICGOODFIND: The Infineon BSC019N02KSG is a benchmark for performance in its class. Its winning combination of ultra-low RDS(on), high current handling, and a thermally efficient package makes it a superior choice for designers aiming to push the limits of power density and efficiency in contemporary low-voltage power systems.
Keywords:
1. Low RDS(on)
2. Synchronous Rectification
3. DC-DC Converter
4. Thermal Management
5. OptiMOS™ 5
